FRAM is a type of non-volatile RAM that uses a ferroelectric film as a capacitor to store data. In contrast to the conventional non-volatile memories like Flash and E²PROM, the content of an FRAM cell is not stored in the form of charge carriers in a ‘floating gate’. The information – logically 0 or 1 – is contained in the polarization of the ferroelectric material lead zirconate titanate, PZT (Pb (ZrTi)O3). This material is placed between two electrodes in the form of a thin film, in a similar way as the structure of a capacitor.
More details on the products can be found on our FRAM product website.