The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 1E12 cycles, significantly outperforming other nonvolatile memory products in the number.
The MB85RC256V does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.
- Bit configuration : 32,768 words × 8 bits
- Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
- Operating frequency : 1 MHz (Max)
- Read/write endurance : 1E12 times / byte
- Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
- Operating power supply voltage : 2.7 V to 5.5 V
- Low-power consumption :
- Operating power supply current 200 μA (Max @1 MHz)
- Standby current 27 μA (Typ)
- Operation ambient temperature range: − 40 °C to + 85 °C
- Package :
- 8-pin plastic SOP (FPT-8P-M02)
- 8-pin plastic SOP (FPT-8P-M08)
- Both are RoHS compliant