Fujitsu is offering a wide range of memory solutions for industrial and automotive applications. Ferroelectric Random Access Memory (FRAM) has a long history within Fujitsu, offering an excellent high speed, high endurance and low power Non-volatile memory technology. Based on the knowledge we have collected with FRAM technology, Fujitsu is offering another innovative Non-volatile RAM technology: ReRAM (Resistive Random Access Memory).
FRAM (Ferroelectric Random Access Memory) is a unique memory solution that combines the best features of RAM and ROM. It significantly outperforms existing non-volatile memories like E2PROM and Flash by offering fast random writing access, high write cycle endurance and low power consumption. FRAM technology functions by utilizing ferroelectric material in the memory cells. Its outstanding features enable significant performance improvements, frequent data access and last data backup at sudden power outage for customer applications.
ReRAM is a non-volatile memory technology featuring lowest power consumption in reading access while allowing random writing access. Based on this technology, considerable changes in resistance of the circuit can be created by applying a pulse voltage to a metal oxide thin film. And this change of resistance can be recorded as ones and zeros.
This brand new memory technology is optimal for IoT, wearable devices and hearing aids applications. More details can be found on our ReRAM product website.