MB85RS4MT


MB85RS4MT

In stock
can be shipped within 5 days

5.17
Price plus delivery, plus VAT if applicable


Possible delivery methods: Germany, EU, Non EU, Non EU - 8.9" Display, Non EU - 12.5" Display, Non EU - 32" Display, Non EU - 43" Display, EU - 8.9" Display, EU - 12.5" Display, EU - 32" Display, EU - 43" Display
MB85RS4MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288
words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
MB85RS4MT adopts the Serial Peripheral Interface (SPI).
The MB85RS4MT is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS4MT can be used for 1013 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS4MT does not take long time to write data like Flash memories or E2PROM, and MB85RS4MT takes
no wait time.
FEATURES
• Bit configuration : 524,288 words x 8 bits
• Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating frequency : 40MHz (Max)
• High endurance : 1013 times / byte
• Data retention : 10 years (+85 °C),95 years(+55 °C), over 200 years(+35 °C)
• Operating power supply voltage : 1.8 V to 3.6 V
• Low power consumption : Operating power supply current 2.6mA (Max@40 MHz)
Standby current µ50 A (Max)
Sleep current 8µA (Max)
• Operation ambient temperature range : -40 °C to +85 °C
• Package : 8-pin plastic SOP (FPT-8P-M08)
RoHS compliant
Browse these categories as well: FRAM, SPI devices